INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
DESCRIPTION
·70
W at 25°C Case Temperature
·Complement
to Type BD543/A/B/C
·8
A Continuous Collector Current
APPLICATIONS
·Designed
for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD544
BD544A
V
CBO
Collector-Base Voltage
BD544B
BD544C
BD544
BD544A
V
CEO
Collector-Emitter Voltage
BD544B
BD544C
V
EBO
I
C
I
CM
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
Storage Temperature Range
-80
-100
-5
-8
-10
70
W
2
150
-65~150
℃
℃
V
A
A
-80
-100
-40
-60
V
VALUE
-40
-60
V
UNIT
BD544/A/B/C
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.17
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD544
BD544A
I
C
= -30mA ; I
B
= 0
BD544B
BD544C
V
CE(
sat
)-1
V
CE(
sat
)-2
V
CE(
sat
)-3
V
BE(
on
)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD544
BD544A
BD544B
BD544C
BD544/A
BD544B/C
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
I
C
= -3A; I
B
= -0.3A
B
BD544/A/B/C
CONDITIONS
MIN
-40
-60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
-80
-100
-0.5
-0.5
-1.0
-1.4
-0.4
-0.4
mA
-0.4
-0.4
-0.7
mA
V
V
V
V
I
C
= -5A; I
B
= -1A
B
I
C
= -8A; I
B
= -1.6A
B
I
C
= -5A; V
CE
= -4V
V
CE
= -40V; V
BE
= 0
V
CE
= -60V; V
BE
= 0
V
CE
= -80V; V
BE
= 0
V
CE
= -100V; V
BE
= 0
V
CE
= -30V; I
B
= 0
B
I
CES
Collector
Cutoff Current
I
CEO
Collector
Cutoff Current
V
CE
= -60V; I
B
= 0
B
V
EB
= -5V; I
C
= 0
I
C
= -1A ; V
CE
= -4V
I
C
= -3A ; V
CE
= -4V
I
C
= -5A ; V
CE
= -4V
60
40
15
-1
mA
Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
0.4
0.7
μs
μs
I
C
= -6A; I
B1
= -I
B2
= -0.6A;
V
BE(
off
)
= 4V, R
L
= 5Ω
isc Website：www.iscsemi.cn
2
Embedded System
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