INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= 150mA
·Complement
to Type BD934/936/938/940/942
APPLICATIONS
·Designed
for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD933
BD935
V
CBO
Collector-Base Voltage
BD937
BD939
BD941
BD933
BD935
V
CEO
Collector-Emitter Voltage
BD937
BD939
BD941
V
EBO
I
C
I
CM
I
B
B
BD933/935/937/939/941
VALUE
45
60
100
120
140
45
60
80
100
120
5
3
7
0.5
30
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.17
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD933
BD935
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BD937
BD939
BD941
V
CE(
sat
)
V
BE(
on
)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= 1A; I
B
= 0.1A
B
BD933/935/937/939/941
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
I
C
= 100mA ; I
B
= 0
80
100
120
0.6
1.3
0.05
1
0.1
0.2
40
25
3
250
V
V
V
mA
mA
mA
I
C
= 1A; V
CE
= 2V
V
CB
= V
CBOmax
; I
E
= 0
V
CB
= V
CBOmax
; I
E
= 0,T
J
=150℃
V
CE
= V
CEOmax
; I
B
= 0
V
EB
= 5V; I
C
= 0
I
C
= 150mA ; V
CE
= 2V
I
C
= 1A ; V
CE
= 2V
I
C
= 250mA ; V
CE
= 10V
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= 1.0A; I
B1
= -I
B2
= 0.1A
Turn-Off Time
1.5
3.0
μs
0.4
1.0
μs
isc Website：www.iscsemi.cn
2
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