INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 25(Min)@ I
C
=
1.0A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 40V(Min)- BDT31F; 60V(Min)- BDT31AF
80V(Min)- BDT31BF; 100V(Min)- BDT31CF
120V(Min)- BDT31DF
·Complement
to Type BDT32F/AF/BF/CF/DF
APPLICATIONS
·Designed
for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
PARAMETER
BDT31F
BDT31AF
V
CBO
Collector-Base
Voltage
BDT31BF
BDT31CF
BDT31DF
BDT31F
BDT31AF
V
CEO
Collector-Emitter
Voltage
BDT31BF
BDT31CF
BDT31DF
V
EBO
I
C
I
CM
I
B
B
BDT31F/AF/BF/CF/DF
VALUE
80
100
120
140
160
40
60
80
100
120
5
3
5
1
22
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
8.12
55
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT31F
BDT31AF
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT31BF
BDT31CF
BDT31DF
BDT31F/AF/BF/CF
V
CE(sat)
Collector-Emitter
Saturation Voltage
BDT31DF
I
C
= 30mA; I
B
= 0
BDT31F/AF/BF/CF/DF
CONDITIONS
MIN
40
60
80
100
120
TYP.
MAX
UNIT
V
I
C
= 3A; I
B
= 0.375A
B
1.2
V
2.5
1.8
0.2
V
mA
I
C
= 3A; I
B
= 0.75A
B
V
BE(on)
I
CES
Base-Emitter On Voltage
Collector Cutoff Current
BDT31F/AF
I
C
= 3A ; V
CE
= 4V
V
CE
= V
CEOmax
; V
BE
= 0
V
CE
= 30V; I
B
= 0
B
I
CEO
Collector
Cutoff Current
BDT31BF/CF
BDT31DF
V
CE
= 60V; I
B
= 0
B
0.1
mA
V
CE
= 90V; I
B
= 0
B
I
EBO
h
FE-1
Emitter Cutoff Current
DC Current Gain
BDT31F/AF/BF/CF
V
EB
= 5V; I
C
= 0
I
C
=1A ; V
CE
= 4V
25
10
I
C
= 3A ; V
CE
= 4V
BDT31DF
5
I
C
= 0.5A ; V
CE
= 10V
3
0.2
mA
50
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= 1.0A; I
B1
= -I
B2
= 0.1A
Turn-Off Time
1.0
μs
0.3
μs
isc Website：www.iscsemi.cn
Sensor
京公网安备 11010802033920号
EEWORLD
