INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 30(Min)@ I
C
=
0.3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 40V(Min)- BDT41F; 60V(Min)- BDT41AF
80V(Min)- BDT41BF; 100V(Min)- BDT41CF
·Complement
to Type BDT42F/AF/BF/CF
APPLICATIONS
·Designed
for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
BDT41F
BDT41AF
V
CBO
Collector-Base Voltage
BDT41BF
BDT41CF
BDT41F
Collector-Emitter
Voltage
BDT41AF
BDT41BF
BDT41CF
V
EBO
I
C
I
CM
I
B
B
BDT41F/AF/BF/CF
VALUE
80
100
UNIT
V
120
140
40
60
V
80
100
5
6
10
3
32
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
6.3
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT41F
BDT41AF
I
C
= 30mA; I
B
= 0
BDT41BF
BDT41CF
V
CE(sat)
V
BE(on)
I
CES
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
BDT41F/AF
BDT41BF/CF
I
C
= 6A; I
B
= 0.6A
B
BDT41F/AF/BF/CF
CONDITIONS
MIN
40
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
80
100
1.5
2.0
0.4
V
V
mA
I
C
= 6A ; V
CE
= 4V
V
CE
= V
CEOmax
; V
BE
= 0
V
CE
= 30V; I
B
= 0
B
I
CEO
Collector
Cutoff Current
0.2
V
CE
= 60V; I
B
= 0
B
mA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
V
EB
= 5V; I
C
= 0
I
C
= 0.3A ; V
CE
= 4V
I
C
= 3A ; V
CE
= 4V
I
C
= 0.5A ; V
CE
= 10V
30
15
3
0.5
mA
75
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= 6A; I
B1
= -I
B2
= 0.6A
Turn-Off Time
1.0
μs
0.6
μs
isc Website：www.iscsemi.cn
Power technology
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