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BU326

Description
isc Silicon NPN Power Transistor
File Size54KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU326 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU326
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 375V(Min)
·Low
Collector-Emitter Saturation Voltage-
: V
CE(
sat
)
= 1.5V(Max.) @ I
C
= 2.5A
APPLICATIONS
·Designed
for use in operating in color TV receivers chopper
supplies.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
800
375
10
6
8
3
75
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.33
UNIT
℃/W
isc Website:www.iscsemi.cn
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