INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU911
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)
APPLICATIONS
·Solenoid/
relay drivers
·Motor
control
·Electronic
automotive ignition
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
400
5
6
10
1
60
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.08
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU911
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0
400
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 50mA
1.8
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 200mA
B
1.8
V
V
BE
(sat)-1
Base-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 50mA
2.2
V
V
BE
(sat)-2
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 200mA
B
2.5
1.0
5.0
1.0
V
I
CES
Collector Cutoff Current
V
CE
= 450V;V
BE
= 0
V
CE
= 450V;V
BE
= 0;T
j
= 125℃
V
CE
= 400V; I
B
= 0
mA
I
CEO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
5.0
mA
V
ECF
C-E Diode Forward Voltage
I
F
= 4A
2.5
V
isc Website:www.iscsemi.cn