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BU911

Description
isc Silicon NPN Power Transistor
File Size81KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU911 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU911
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)
APPLICATIONS
·Solenoid/
relay drivers
·Motor
control
·Electronic
automotive ignition
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
400
5
6
10
1
60
150
-65~150
UNIT
V
V
V
A
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.08
UNIT
℃/W
isc Website:www.iscsemi.cn

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