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BU922

Description
isc Silicon NPN Power Transistor
File Size81KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU922 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU922
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 450V(Min)
APPLICATIONS
·Designed
for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
500
450
5
10
15
5
105
150
-65~150
UNIT
V
V
V
A
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.2
UNIT
℃/W
isc Website:www.iscsemi.cn
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Index Files: 1927  856  2547  1284  2727  39  18  52  26  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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