INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Voltage Capability
·High
Current Capability
·Fast
Switching Speed
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
BUV48A
PARAMETER
Collector-Emitter Voltage
(V
BE
= -1.5V)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
15
30
5
20
150
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CER
I
CEX
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 0.2A ; I
B
= 0; L= 25mH
I
E
= 50mA; I
C
= 0
I
C
= 8A; I
B
= 1.6A
I
C
= 8A; I
B
= 1.6A;T
C
= 100℃
B
B
BUV48A
MIN
450
7
MAX
UNIT
V
V
1.5
2.0
5.0
1.6
1.6
0.5
3.0
0.2
2.0
0.1
8
350
V
V
V
mA
mA
mA
I
C
= 12A ;I
B
= 2.4A
I
C
= 8A; I
B
= 1.6A
I
C
= 8A; I
B
= 1.6A;T
C
= 100℃
B
B
V
CE
=rated V
CER
; R
BE
= 10Ω
V
CE
=rated V
CER
; R
BE
= 10Ω;T
C
=125℃
V
CE
=rated V
CES
; V
BE(
off
)
= 1.5V
V
CE
=rated V
CES
; V
BE(
off
)
= 1.5V;T
C
=125℃
V
EB
= 5V; I
C
= 0
I
C
= 8A; V
CE
= 5V
I
E
= 0; V
CB
= 10V, f
test
= 1MHz
pF
Switching times Resistive Load
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 8A ;I
B1
=-I
B2
= 1.6A; V
CC
= 300V
V
BE(
off
)
= 5V,Duty Cycle≤2%
0.9
2.0
0.4
μs
μs
μs
isc Website：www.iscsemi.cn
Embedded System
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