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BUW132H

Description
isc Silicon NPN Power Transistor
File Size75KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BUW132H Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUW132H
DESCRIPTION
·High
Switching Speed
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 450V
APPLICATIONS
·Designed
for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage
(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
MAX
850
450
6
8
16
6
12
125
200
-65~200
UNIT
V
V
V
A
A
A
A
W
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website:www.iscsemi.cn
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