INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
TIP30
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -40V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= -0.7V(Max.)@I
C
= -1.0A
·Complement
to Type TIP29
APPLICATIONS
·Designed
for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
VALUE
-40
-40
-5
-1
-3
-0.4
30
150
-65~150
UNIT
V
V
V
A
A
A
w
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.17
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
TIP30
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= -30mA; I
B
= 0
-40
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.125A
-0.7
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -1A; V
CE
= -4V
-1.3
V
I
CES
Collector Cutoff Current
V
CE
= -40V; V
BE
= 0
-0.2
mA
I
CEO
Collector Cutoff Current
V
CE
= -30V; I
B
= 0
-0.3
mA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-1.0
mA
h
FE-1
DC Current Gain
I
C
= -0.2A; V
CE
= -4V
40
h
FE-2
DC Current Gain
I
C
= -1A ; V
CE
= -4V
15
75
f
T
Current-Gain—Bandwidth Product
I
C
= -0.2A; V
CE
= -10V; f= 1MHz
3
MHz
isc Website：www.iscsemi.cn
Embedded System
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