INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 40(Min)@ I
C
= -
5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -60V(Min)- BDT82; -80V(Min)- BDT84;
-100V(Min)- BDT86; -120V(Min)- BDT88
·Complement
to Type BDT81/83/85/87
APPLICATIONS
·Designed
for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
BDT82
BDT84
V
CBO
Collector-Base Voltage
BDT86
BDT88
BDT82
BDT84
V
CEO
Collector-Emitter Voltage
BDT86
BDT88
V
EBO
I
C
I
CM
I
B
B
BDT82/84/86/88
VALUE
-60
-80
UNIT
V
-100
-120
-60
-80
V
-100
-120
-7
-15
-20
-4
125
150
-65~150
V
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT82
BDT84
I
C
= -30mA; I
B
= 0
BDT86
BDT88
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CES
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= -5A; I
B
= -0.5A
B
BDT82/84/86/88
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
-100
-120
-1.0
-1.6
-1.5
-1
-0.2
-0.1
40
40
20
MHz
V
V
V
mA
mA
mA
I
C
= -7A; I
B
= -0.7A
B
I
C
= -5A ; V
CE
= -4V
V
CE
= 0.8V
CBOmax
; V
BE
= 0
V
CB
= V
CBOmax
; I
E
= 0
V
EB
= -7V; I
C
= 0
I
C
= -50mA ; V
CE
= -10V
I
C
= -5A ; V
CE
= -4V
I
C
= -0.5A ; V
CE
= -10V
Switching Times
t
on
t
off
Turn-On Time
I
C
= -7A; I
B1
= -I
B2
= -0.7A
Turn-Off Time
2
μs
1
μs
isc Website：www.iscsemi.cn
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