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BDV94

Description
isc Silicon PNP Power Transistor
File Size75KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDV94 Overview

isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
10A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -45V(Min)- BDV92; -60V(Min)- BDV94
-80V(Min)- BDV96
·Complement
to Type BDV91/93/95
APPLICATIONS
·Designed
for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV92
V
CER
Collector-Emitter
Voltage
BDV94
BDV96
BDV92
V
CEO
Collector-Emitter
Voltage
BDV94
BDV96
V
EBO
I
C
I
CM
I
B
B
BDV92/94/96
VALUE
-60
-80
-100
-60
-80
-100
-7
-10
-20
-7
-14
100
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Emitter Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
A
W
I
E
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.25
UNIT
℃/W
isc Website:www.iscsemi.cn

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BDV94 BDV92 BDV96
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