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BDW24

Description
6 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDW24 Overview

6 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
BDW24/A/B/C
DESCRIPTION
·Collector
Current -I
C
= -
6A
·High
DC Current Gain-h
FE
= 750(Min)@ I
C
= -2A
·Complement
to Type BDW23/A/B/C
APPLICATIONS
·Designed
for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW24
BDW24A
BDW24B
BDW24C
BDW24
BDW24A
BDW24B
BDW24C
V
EBO
I
C
I
CM
I
B
B
VALUE
-45
-60
UNIT
V
CER
Collector-Emitter
Voltage
V
-80
-100
-45
-60
V
-80
-100
-5
-6
-8
-0.2
50
150
-65~150
V
A
A
A
W
V
CEO
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
isc Website:www.iscsemi.cn

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BDW24 BDW24A BDW24C BDW24B
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