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BDW56

Description
isc Silicon PNP Power Transistors
File Size77KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDW56 Overview

isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
DESCRIPTION
·Collector–Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -45V- BDW56
= -60V- BDW58
= -80V- BDW60
·Complement
to Type BDW55/57/59
APPLICATIONS
·Designed
for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW56
V
CBO
Collector-Base
Voltage
BDW58
BDW60
BDW56
V
CER
Collector-Emitter
Voltage R
BE
= 1kΩ
BDW58
BDW60
BDW56
V
CEO
Collector-Emitter
Voltage
BDW58
BDW60
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-45
-60
-100
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
8
175
-65~175
V
A
A
W
V
V
V
UNIT
BDW56/58/60
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
10
100
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn

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