INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU111
DESCRIPTION
·Collector-Emitter
Sustaining Voltag-
: V
CEO(SUS)
= 300V(Min)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 1.5V(Max)@ I
C
= 2.5A
APPLICATIONS
·Designed
for use in color TV receivers chopper supplies.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Repetitive
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
500
300
6
6
8
3
50
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU111
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ;I
B
= 0
200
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA ;I
C
= 0
6
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 0.5A
1.5
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 0.5A
1.4
V
I
CBO
Collector Cutoff Current
V
CB
= 400V; I
E
=0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
=0
0.1
mA
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A ; V
CE
= 10V
10
MHz
isc Website：www.iscsemi.cn
2
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