INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU306F/307F
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)- BD306F
400V(Min)- BD307F
·Collector
Current-8A
APPLICATIONS
·Designed
for use in switching regulators, inverters, motor
controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BU306F
V
CBO
Collector-Base Voltage
BU307F
BU306F
V
CEO
Collector-Emitter Voltage
BU307F
V
EBO
I
C
I
CM
I
B
B
VALUE
600
UNIT
V
700
300
V
400
9
8
16
4
8
20
150
-65~150
V
A
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
6.12
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BU306F
I
C
= 0.1A ;I
B
= 0; L=25mH
B
BU306F/307F
CONDITIONS
MIN
300
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
400
BU307F
V
CE(sat)-1
V
CE(sat)-2
V
CE(sat)-3
V
BE(sat)-1
V
BE(sat)-2
I
CES
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
I
C
= 2A; I
B
= 0.4A
B
1.0
1.5
2.0
3.0
1.2
1.6
1.5
1
5
1
15
8
6
80
4
50
40
30
V
V
V
V
V
mA
mA
I
C
= 5A; I
B
= 1A
I
C
= 5A; I
B
= 1A; T
J
= 100℃
B
B
I
C
= 8A; I
B
= 2A
B
I
C
= 2A; I
B
= 0.4A
B
I
C
= 5A; I
B
= 1A
I
C
= 5A; I
B
= 1A; T
J
= 100℃
B
B
V
CE
= V
CESmax
;V
BE
= -1.5V
V
CE
= V
CESmax
;V
BE
= -1.5V;T
J
= 100℃
V
EB
= 9V; I
C
=0
I
C
= 0.5A ; V
CE
= 5V
I
C
= 2A ; V
CE
= 5V
I
C
= 5A ; V
CE
= 5V
I
E
= 0 ; V
CB
= 10V
I
C
= 0.5A ; V
CE
= 10V, f
test
= 1.0MHz
pF
MHz
Switching Times ; Resistive Load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
0.1
1.0
3.0
0.7
μs
μs
μs
μs
I
C
= 5A; I
B1
= -I
B2
= 1A;
V
CC
= 125V; t
p
= 25μs
isc Website：www.iscsemi.cn
2
Embedded System
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