Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2N6101
DESCRIPTION
・With
TO-220 package
・High
current capability
APPLICATIONS
・For
use in general-purpose amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
电半
固
PARAMETER
导½
CONDITIONS
2N6098
2N6099
2N6100
Collector-base voltage
V
CEO
Collector-emitter voltage
AN
CH
IN
2N6101
2N6098
2N6099
MIC
SE
G
Open emitter
Open base
Open collector
TOR
UC
ND
O
VALUE
70
70
80
80
70
70
80
80
8
10
UNIT
V
V
2N6100
2N6101
V
EBO
I
C
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
V
A
W
℃
℃
75
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.67
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6098
2N6099
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6100
2N6101
V
CEsat-1
V
CEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
2N6098/6099
V
BE
Base-emitter on voltage
2N6098 2N6099 2N6100 2N6101
CONDITIONS
MIN
70
70
TYP.
MAX
UNIT
I
C
=0.1A ;I
B
=0
80
80
I
C
=5A;I
B
=0.5A
I
C
=10A;I
B
=2.5A
I
C
=4A ; V
CE
=4V
1.3
I
C
=5A ; V
CE
=4V
1.3
3.5
V
V
V
I
CBO
I
EBO
固电
Collector cut-off current
导½
半
V
2N6100/6101
V
CB
=Rated V
CBO
;I
E
=0
T
C
=150℃
V
EB
=8V; I
C
=0
Emitter cut-off current
h
FE
DC current gain
AN
CH
IN
2N6098/6099
MIC
SE
G
TOR
UC
ND
O
0.5
2.0
1.0
20
80
0.8
mA
mA
I
C
=4A ; V
CE
=4V
2N6100/6101
I
C
=5A ; V
CE
=4V
I
C
=1A ; V
CE
=10V
MHz
f
T
Transition frequency
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6098 2N6099 2N6100 2N6101
固电
导½
半
MIC
SE
G
AN
CH
IN
TOR
UC
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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