Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1276
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC3230
·Good
linearity of h
FE
APPLICATIONS
·General
purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-30
-30
-5
-3
3
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-10mA ,I
B
=0
I
E
=-1mA ,I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-0.5A ; V
CE
=-2V
V
CB
=-20V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-2.5A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-2V
I
E
=0 ; V
CB
=10V;f=1MHz
70
25
100
40
MIN
-30
-5
-0.3
2SA1276
TYP.
MAX
UNIT
V
V
-0.8
-1.0
-1.0
-1.0
240
V
V
μA
μA
-0.75
MHz
pF
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1276
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon Power Transistors
2SA1276
4
Inchange Semiconductor
Product Specification
Silicon Power Transistors
2SA1276
5