Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
DESCRIPTION
・With
TO-220Fa package
・High
forward current transfer ratio h
FE
which has satisfactory linearity
・Low
collector saturation voltage
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
导½
半
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter-base voltage
Collector current
Collector-emitter voltage
ES
NG
2SB954
2SB954A
2SB954
2SB954A
Open emitter
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-80
-60
-80
UNIT
V
Open base
V
V
EBO
I
C
I
CM
Open collector
-5
-1
-2
V
A
A
Collector current-peak
T
a
=25℃
2
W
30
150
-55~150
℃
℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB954
I
C
=-30mA ;I
B
=0
2SB954A
I
C
=-1.0A ;I
B
=-0.125A
I
C
=-1A ; V
CE
=-4V
2SB954
2SB954A
2SB954
2SB954A
V
CE
=-30V; I
B
=0
CONDITIONS
2SB954 2SB954A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
-80
-1.0
-1.3
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter voltage
I
CEO
Collector
cut-off current
-300
V
CE
=-60V; I
B
=0
V
CE
=-60V; V
BE
=0
-200
V
CE
=-80V; V
BE
=0
V
EB
=-5V; I
C
=0
I
C
=-0.2A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
70
-1
μA
I
CES
Collector
cut-off current
μA
I
EBO
h
FE-1
h
FE-2
f
T
t
on
t
s
t
f
Emitter cut-off current
mA
电半
固
Trun-on time
Storage time
Fall time
DC current gain
DC current gain
导½
Transition frequency
INC
P
ANG
H
MIC
E SE
I
C
=-1A ;V
CC
=-50V
I
B1
=-0.1A, I
B2
=0.1A
I
C
=-0.2A; V
CE
=-5V,f=10MHz
OR
UCT
ND
O
250
15
30
0.5
1.2
0.3
MHz
μs
μs
μs
h
FE-1
Classifications
Q
70-150
120-250
2
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