INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BUS21B/C
DESCRIPTION
·High
Switching Speed
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V (Min)-BUS21B
450V (Min)-BUS21C
APPLICATIONS
·Designed
for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BUS21B
BUS21C
BUS21B
BUS21C
V
EBO
I
C
I
CM
I
B
B
MAX
750
UNIT
V
CES
Collector- Emitter
Voltage(V
BE
= 0)
V
850
400
V
450
9
5
10
2
4
100
200
-65~200
V
A
A
A
A
W
℃
℃
V
CEO
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.75
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUS21B
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BUS21C
BUS21B
V
CE(sat)
Collector-Emitter
Saturation Voltage
BUS21C
BUS21B
V
BE(sat)
Base-Emitter
Saturation Voltage
BUS21C
I
CES
I
EBO
h
FE-1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
BUS21B
h
FE-2
DC Current Gain
BUS21C
I
C
= 3A ; V
CE
= 1.5V
6
I
C
= 3A; I
B
= 0.4A
B
BUS21B/C
CONDITIONS
MIN
400
TYP.
MAX
UNIT
I
C
= 0.1A ; I
B
= 0; L= 25mH
450
1.5
V
V
I
C
= 3A; I
B
= 0.5A
B
1.5
1.5
V
1.5
1
10
25
7.5
mA
mA
I
C
= 3A; I
B
= 0.4A
B
I
C
= 3A; I
B
= 0.5A
B
V
CE
=V
CESMmax
; V
BE
= 0
V
EB
= 9V; I
C
= 0
I
C
= 0.5A ; V
CE
= 10V
isc Website：www.iscsemi.cn
Embedded System
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