INCHANGE Semiconductor
isc
Product Specification
2SA877
isc
Silicon PNP Power Transistor
DESCRIPTION
·High
Power Dissipation-
: P
C
= 100W(Max.)@T
C
=25℃
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -80V(Min.)
APPLICATIONS
·Designed
for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-80
V
V
CEO
Collector-Emitter Voltage
-80
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-10
A
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
-4
A
P
C
100
W
T
j
150
℃
T
stg
Storage Temperature
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
2SA877
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -50mA ;I
B
= 0
-80
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -0.5A
-2.0
V
I
CBO
Collector Cutoff Current
V
CB
= -80V; I
E
= 0
-0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= -6V; I
C
= 0
-0.1
mA
h
FE
DC Current Gain
I
C
= -3A ; V
CE
= -4V
30
C
OB
Output Capacitance
I
E
= 0; V
CB
= -10V; f= 1MHz
255
pF
f
T
Current-Gain—Bandwidth Product
I
E
= 0.5A; V
CE
= -12V
15
MHz
isc Website：www.iscsemi.cn
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