Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB632 2SB632K
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD612/612K
・High
collector dissipation
・Wide
ASO(Safe Operating Area)
APPLICATIONS
・25V/35V,
2A low-frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
IN
导½
半
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
ANG
CH
2SB632
2SB632K
2SB632
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-25
-35
-25
-35
-5
-2
-3
UNIT
V
V
2SB632K
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
V
A
A
1
W
10
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB632
I
C
=-1mA; R
BE
=∞
2SB632K
2SB632
I
C
=-10μA ;I
E
=0
2SB632K
I
E
=-10μA ;I
C
=0
I
C
=-1.5A ;I
B
=-0.15A
I
C
=-1.5A ;I
B
=-0.15A
V
CB
=-20V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
CONDITIONS
2SB632 2SB632K
MIN
-25
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-35
-25
V
-35
-5
-0.4
-1.1
-0.9
-1.5
-1
-1
V
V
V
μA
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
固电
DC current gain
DC current gain
导½
半
ANG
H
Transition frequency
Collector output capacitance
Switching times
t
on
t
f
t
stg
INC
MIC
E SE
I
C
=-50mA ; V
CE
=-10V
f=1MHz ; V
CB
=-10V
I
C
=500mA ; V
CE
=12V
I
B1
=-I
B2
=50mA
I
C
=-1.5A ; V
CE
=-2V
OR
UCT
ND
O
60
320
30
100
45
0.06
0.08
0.40
MHz
pF
Turn-on time
Fall time
Storage time
μs
μs
μs
h
FE-1
Classifications
D
60-120
E
100-200
F
160-320
2
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