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3DD303B

Description
isc Silicon NPN Power Transistor
File Size49KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD303B Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD303B
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 0.6V(Max) @I
C
= 0.5A
APPLICATIONS
·Designed
for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=75℃
Junction Temperature
3
A
P
C
30
W
T
J
150
T
stg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th
j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website:www.iscsemi.cn
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