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BA159

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size77KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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BA159 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159 Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current35 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.3 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BA157 thru BA159
FAST RECOVERY RECTIFIERS
REVERSE VOLTAGE
- 400
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
DO- 41
FEATURES
Fast switching for high efficiency
Low cost
Diffused junction
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
1.0(25.4)
MIN
.034(0.9)
DIA
.028(0.7)
.205(5.2)
MAX
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34 grams
Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=75
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
BA157
400
280
400
BA158
600
420
600
1.0
BA159
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
rr
C
J
R
θJA
T
J
T
STG
150
25
30
1.3
5.0
100
250
15
25
-55 to +125
-55 to +150
500
A
V
μA
nS
pF
℃/W
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient.
~ 62 ~

BA159 Related Products

BA159 BA157 BA158
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
Maker HY Electronic HY Electronic HY Electronic
package instruction O-PALF-W2 O-PALF-W2 PLASTIC PACKAGE-2
Reach Compliance Code unknown unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 1000 V 400 V 600 V
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum forward voltage (VF) 1.3 V 1.3 V -
Maximum non-repetitive peak forward current 35 A 35 A -
Maximum reverse recovery time 0.3 µs 0.3 µs -
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