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BD140

Description
1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Categorysemiconductor    Discrete semiconductor   
File Size116KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD140 Overview

1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA

BD140 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionPLASTIC, CASE 77-09, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption1.25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor25
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・High
current
・Complement
to type BD135/137/139
APPLICATIONS
・Driver
stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD136 BD138 BD140
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
电半
PARAMETER
导½
CONDITIONS
BD136
BD138
Collector-base voltage
BD140
V
CEO
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
CH
IN
Collector-emitter voltage
ANG
BD136
BD138
MIC
E SE
Open base
Open collector
Open emitter
OR
UCT
ND
O
VALUE
-45
-60
-100
-45
-60
-100
-5
-1.5
-2
-1
UNIT
V
V
BD140
Emitter -base voltage
V
A
A
A
W
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
≤70℃
8
150
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W

BD140 Related Products

BD140 BD138
Description 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum collector current 1.5 A 1.5 A
Maximum Collector-Emitter Voltage 80 V 60 V
Processing package description PLASTIC, CASE 77-09, 3 PIN TO-126, 3 PIN
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE
terminal coating TIN LEAD TIN LEAD
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Number of components 1 1
transistor applications AMPLIFIER SWITCHING
Transistor component materials SILICON SILICON
Maximum ambient power consumption 1.25 W 1.25 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 25 25
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