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TLP176AM(E

Description
Transistor Output SSR
CategoryLED optoelectronic/LED    photoelectric   
File Size417KB,15 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TLP176AM(E Overview

Transistor Output SSR

TLP176AM(E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSOP-6/4
Reach Compliance Codeunknown
Other featuresUL APPROVED
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum forward current0.0195 A
Maximum insulation voltage3750 V
Number of components1
Maximum on-state resistance2 Ω
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
Optoelectronic device typesTRANSISTOR OUTPUT SSR
Base Number Matches1
TLP176AM
Photocouplers
Photorelay
TLP176AM
1. Applications
Security Systems
Factory Automation (FA)
Measuring Instruments
Battery Management System (BMS) (Non-Automotive)
Programmable Logic Controllers (PLCs)
Mechanical relay replacements
2. General
The Toshiba TLP176AM consists of a gallium arsenide infrared emitting diode optically coupled to a photo-
MOSFET in a 4-pin SO6 package. This photorelay has higher output current rating than phototransistor-type
photocoupler; hence, it is suitable for use as On/Off control for high current.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Halogen-free
For details, see "Devices in Halogen-Free Resin Packages" at the end of this datasheet.
Operating temperature range: 110
(max)
Normally opened (1-Form-A)
OFF-state output terminal voltage: 60 V (min)
Trigger LED current: 3 mA (max)
ON-state current: 700 mA (max)
ON-state resistance: 2
(max)
Isolation voltage: 3750 Vrms (min)
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
UL-approved: UL508, File No.E499232 (Note 1)
VDE-approved: EN60747-5-5 (Note 2)
Note 1: Please refer Absolute Maximum Ratings (UL-approved UL508) for UL508 products.
Note 2: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Table 3.1 Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
TLP176AM
5.0 (min)
5.0 (min)
0.2 (min)
Unit
mm
Start of commercial production
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1
2018-02
2018-10-25
Rev.4.0

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