Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD434/436/438
DESCRIPTION
・With
TO-126 package
・Complement
to type BD433/435/437
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
IN
导½
半
PARAMETER
CONDITIONS
BD434
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
HA
C
ES
NG
BD438
BD434
BD436
BD438
BD436
Open emitter
MIC
E
DUC
ON
VALUE
-22
-32
-45
-22
-32
-45
OR
T
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
-5
-4
-7
-1
V
A
A
A
W
℃
℃
T
C
=25℃
36
150
-65~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
saturation voltage
BD434/436
I
C
=-2A; I
B
=-0.2A
BD438
BD434/436
V
BE
Base-emitter on voltage
BD438
BD434
V
CEO(SUS)
Collector-emitter
sustaining voltage
BD436
BD438
BD434
I
CES
Collector cut-off current
BD436
BD438
V
CB
=-22V; I
E
=0
V
CB
=-32V; I
E
=0
V
CB
=-45V; I
E
=0
V
CE
=-22V; V
BE
=0
V
CE
=-32V; V
BE
=0
V
CE
=-45V; V
BE
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A; I
B
=0
I
C
=-2A ; V
CE
=-1V
CONDITIONS
BD434/436/438
MIN
TYP.
MAX
-0.5
UNIT
V
CEsat
-0.2
-0.6
-1.1
V
V
-1.2
-22
-32
-45
V
-100
μA
I
CES
固电
Collector cut-off current
导½
半
BD434
BD436
BD438
I
EBO
Emitter cut-off current
h
FE-1
DC current gain
h
FE-2
DC current gain
CH
IN
ANG
BD434/436
BD438
MIC
E SE
I
C
=-0.5A ; V
CE
=-1V
I
C
=-2A ; V
CE
=-1V
DUC
ON
40
30
85
50
40
OR
T
-100
-1
130
μA
mA
I
C
=-10mA ; V
CE
=-5V
140
BD434/436
h
FE-3
DC current gain
BD438
f
T
Transition frequency
I
C
=-250mA; V
CE
=-1V
3
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD434/436/438
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
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