TLP2601
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP2601
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer−Peripheral Interface
Microprocessor System Interface
Digital Isolation For A/D, D/A Conversion
Direct Replacement For HCPL−2601
The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/μs.
•
•
•
•
•
•
Input current thresholds: I
F
= 5mA max.
Isolation voltage: 2500Vrms min.
Switching speed: 10MBd
Common mode transient immunity: 1000V/μs min.
Guaranteed performance over temp.: 0°C~70°C
UL Recognized: UL1577, file No. E67349
1
8
7
6
5
SHIELD
Unit in mm
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Pin Configuration
(top view)
Truth Table
(positive logic)
Input
H
L
H
L
Enable
H
H
L
L
Output
L
H
H
H
2
3
4
Schematic
I
F
2
V
F
3
-
SHIELD
I
E
V
E
5
7
GND
+
I
CC
I
O
8
6
V
CC
V
O
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).
1
2007-10-01
TLP2601
Recommended Operating Conditions
Characteristic
Input current, low level
Input current, high level
Supply voltage**, output
High level enable voltage
Low level enable voltage
Fan out (TTL load)
Operating temperature
Symbol
I
FL
I
FH
V
CC
V
EH
V
EL
N
T
opr
Min.
0
6.3 (*)
4.5
2.0
0
⎯
0
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max.
250
20
5.5
V
CC
0.8
8
70
Unit
μA
mA
V
V
V
⎯
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
Absolute Maximum Ratings
(no derating required)
Characteristic
Forward current
Reverse voltage
Output current
Output voltage
Detector
Supply voltage
(1 minute maximum)
Enable input voltage
(not to exceed V
CC
by more than 500mV)
Output collector power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage
(R.H.≤ 60%,AC 1min.,
(Note 10)
(**)
Symbol
I
F
V
R
I
O
V
O
V
CC
Rating
20
5
25
−0.5~7
7
Unit
mA
V
mA
V
V
LED
V
E
P
o
T
opr
T
stg
T
sol
BV
S
5.5
40
−40~85
−55~125
260
2500
3540
V
mW
°C
°C
°C
Vrms
V
dc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(**) 1.6mm below seating plane.
2
2007-10-01
TLP2601
Electrical Characteristics
(Ta = 0°C
~
70°C unless otherwise noted)
Characteristic
High level output current
Symbol
I
OH
Test Condition
V
CC
= 5.5V, V
O
= 5.5V
I
F
= 250μA, V
E
= 2.0V
V
CC
= 5.5V, I
F
= 5mA
V
E
= 2.0V, I
OL
(sinking) = 13mA
V
CC
= 5.5V, I
F
= 0, V
E
= 0.5V
V
CC
= 5.5V, I
F
= 10mA
V
E
= 0.5V
V
CC
= 5.5V, V
E
= 0.5V
V
CC
= 5.5V, V
E
= 2.0V
(Note 11)
⎯
I
F
= 10mA, Ta = 25℃
I
R
= 10μA, Ta = 25℃
V
F
= 0, f = 1MHz
I
F
= 10mA
Relative humidity = 45%
Ta=25℃, t = 5 second
(Note 10)
V
I−O
= 3000Vdc,
V
I−O
= 500V, R.H.≤ 60%
(Note 10)
f = 1MHz,
(Note 10)
Min.
⎯
Typ.
1
Max.
250
Unit
μA
Low level output voltage
High level supply current
V
OL
I
CCH
⎯
⎯
0.4
7
0.6
15
V
mA
Low level supply current
I
CCL
⎯
12
19
mA
Low level enable current
High level enable current
High level enable voltage
Low level enable voltage
Input forward voltage
Input reverse breakdown
voltage
Input capacitance
Input diode temperature
coefficient
Input−output insulation
leakage current
Resistance (input−output)
Capacitance (input−output)
I
EL
I
EH
V
EH
V
EL
V
F
BV
R
C
IN
ΔV
F
/ΔT
A
⎯
⎯
2.0
⎯
⎯
5
⎯
⎯
−1.6
−1
⎯
⎯
1.65
⎯
45
−2.0
−2.0
⎯
⎯
mA
mA
V
0.8
1.75
⎯
⎯
⎯
V
V
pF
mV / °C
I
I−O
⎯
⎯
1
μA
R
I−O
C
I−O
5×10
⎯
10
10
14
⎯
⎯
Ω
pF
0.6
(**)All typ.values are at V
CC
= 5V, Ta = 25°C.
3
2007-10-01
TLP2601
Switching Characteristics
(Ta = 25℃, V
CC
= 5 V)
Characteristic
Propagation delay time to
high output level
Propagation delay time to
low output level
Output rise time(10−90%)
Output fall time(90−10%)
Propagation delay time of
enable from V
EH
to V
EL
Propagation delay time of
enable from V
EL
to V
EH
Symbol
t
pLH
Test
Circuit
Test Condition
Min.
―
Typ.
60
Max.
75
Unit
ns
R
L
= 350Ω, C
L
= 15pF
1
I
F
= 7.5mA
(Note 2), (Note 3),
(Note 4)&(Note 5)
t
pHL
t
r
t
f
t
ELH
―
―
―
60
30
30
25
75
―
―
―
ns
ns
ns
ns
R
L
= 350Ω, C
L
= 15pF
I
F
= 7.5mA
2
V
EH
= 3.0V
V
EL
= 0.5V
(Note 6)&(Note 7)
V
CM
= 400V
―
t
EHL
―
25
―
ns
Common mode transient
immunity at high output
level
3
Common mode transient
immunity at low output
level
CM
L
CM
H
R
L
= 350Ω
V
O(min.)
= 2V
I
F
= 0mA,
V
CM
= 400V
R
L
= 350Ω
V
O(max.)
= 0.8V
I
F
= 7.5mA,
(Note 8)
(Note 9)
1000
10000
―
V/μs
−1000 −10000
―
V/μs
4
2007-10-01
TLP2601
Test Circuit 1.
5V
t
pHL
and t
pLH
I
F
= 7.5mA
I
F
= 3.75mA
t
pHL
t
pLH
Output V
O
1.5V
V
OH
V
OL
Pulse
generator
Z
O
= 50Ω
t
r
= 5ns
I
F
Monitoring
node
1
2
3
4
GND
V
CC
8
0.1μF
Bypass
C
L
(*)
Input I
F
7
6
5
R
L
V
O
Output
monitor-
ing
node
(*) C
L
is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 2.
t
ELH
and t
EHL
Pulse
generator
Z
O
= 50
Ω
t
r
= 5ns
3.0V
Input V
E
t
EHL
t
ELH
Output V
O
1.5V
V
OH
V
OL
1.5V
7.5mA
dc
I
F
Input V
E
monitoring node
5V
1
2
3
4
GND
V
CC
8
0.1μF
Bypass
C
L
(*)
47Ω
7
6
5
R
L
V
O
Output
monitor-
ing
node
(*) C
L
is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 3.
Transient Immunity and Typ. Waveforms.
1
90%
V
CM
V
O
Switch at A : I
F
= 0mA
V
O
Switch at B : I
F
= 5mA
V
OL
10%
t
r
10%
90%
t
f
400V
0V
B
5V
V
FF
A
I
F
2
3
4
Pulse gen.
Z
O
= 50
Ω
GND
V
CM
V
CC
8
7
6
5
0.1μF
Bypass
R
L
V
O
5V
5
2007-10-01
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