Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type BD896/898/900/902
・DARLINGTON
APPLICATIONS
・For
use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD895/897/899/901
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
固电
IN
导½
半
PARAMETER
CONDITIONS
BD895
V
CBO
Collector-base voltage
HA
C
ES
NG
BD899
BD901
BD895
BD897
BD899
BD901
BD897
Open emitter
MIC
E
DUC
ON
VALUE
45
60
OR
T
80
100
45
60
UNIT
V
V
CEO
Collector-emitter voltage
Open base
80
100
Open collector
5
8
300
T
C
=25℃
70
V
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current-DC
Base current
Total power dissipation
V
A
mA
W
T
a
=25℃
Junction temperature
Storage temperature
2
150
-65~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD895
BD897
I
C
=100mA, I
B
=0
BD899
BD901
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
BD895
BD897
I
CBO
Collector cut-off current
BD899
I
C
=3A ,I
B
=12mA
I
C
=3A ; V
CE
=3V
V
CB
=45V, I
E
=0
T
C
=100℃
V
CB
=60V, I
E
=0
T
C
=100℃
V
CB
=80V, I
E
=0
T
C
=100℃
V
CB
=100V, I
E
=0
T
C
=100℃
V
CE
=30V, I
B
=0
V
CE
=30V, I
B
=0
V
CE
=40V, I
B
=0
V
CE
=50V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
E
=8A
I
C
=3A ; I
B1
=-I
B2
=12mA
V
BE
=-3.5V;R
L
=10Ω;t
p
=20μs
CONDITIONS
BD895/897/899/901
MIN
45
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
100
2.5
2.5
0.2
2.0
0.2
2.0
0.2
2.0
V
V
mA
固电
I
CEO
I
EBO
h
FE
V
EC
t
on
t
off
导½
半
BD901
BD895
BD897
BD899
Collector cut-off current
Emitter cut-off current
DC current gain
IN
HA
C
ES
NG
BD901
MIC
E
OR
UCT
ND
O
0.5
2
750
3.5
1
5
0.2
2.0
mA
mA
Diode forward voltage
Turn-on time
Turn-off time
V
μs
μs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.79
UNIT
℃/W
2
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