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BD897A

Description
8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size117KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD897A Overview

8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type BD896A/898A/900A
・DARLINGTON
APPLICATIONS
・For
use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD895A/897A/899A
Absolute maximum ratings(Ta=25
)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
BD895A
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter-base voltage
Collector current-DC
Base current
ES
NG
BD897A
BD899A
BD895A
BD897A
BD899A
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
45
60
80
45
60
80
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
B
Open collector
5
8
300
V
A
mA
T
C
=25℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
70
W
2
150
-65~150

BD897A Related Products

BD897A BD895A BD899A
Description 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB POWER TRANSISTOR, TO-220 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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