INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2507DX
DESCRIPTION
·High
Switching Speed
·High
Voltage
·Built-in
Ddamper Ddiode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
7.5
8
15
4
6
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.8
UNIT
K/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2507DX
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ;I
B
= 0,L= 25mH
700
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 600mA ;I
C
= 0
7.5
13.5
V
V
CE
(sat)
V
BE
(sat)
I
CES
Collector-Emitter Saturation Voltage
I
C
= 4A ;I
B
= 0.8A
5.0
V
Base-Emitter Saturation Voltage
I
C
= 4A ;I
B
= 0.8A
V
CE
= BV
CES;
V
BE
= 0
V
CE
= BV
CES;
V
BE
= 0;T
C
=125℃
V
EB
= 7.5V; I
C
= 0
160
1.1
1.0
2.0
V
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 1A ; V
CE
= 5V
14
h
FE-2
DC Current Gain
I
C
= 4A ; V
CE
= 5V
5
7
9
V
ECF
C-E Diode Forward Voltage
I
F
= 4A
2.0
V
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V;f
test
= 1MHz
68
pF
isc Website：www.iscsemi.cn
Linux and Android
京公网安备 11010802033920号
EEWORLD
