INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU4530AW
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of color
TV rceivers and PC monitors.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
16
40
10
15
125
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CES
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 100mA; I
B
= 0; L= 25mH
I
E
= 1mA; I
C
= 0
I
C
= 10A ;I
B
= 2.22A
I
C
= 10A ;I
B
= 2.22A
V
CEV
=1500V,V
BE
(off)
=0
V
CEV
=1500V,V
BE
(off)
=0;T
C
=125℃
I
C
= 1A ; V
CE
= 5V
I
C
= 10A ; V
CE
= 5V
4.8
MIN
800
7.5
BU4530AW
TYP.
MAX
UNIT
V
V
3.0
1.01
1.0
2.0
12
8.5
V
V
mA
Switching times; Resistive load
Storage Time
I
C
= 9A; I
B1
= 1.8A; I
B2
= -4.5A
t
f
Fall Time
0.20
0.26
μs
3.0
4.0
μs
t
s
isc Website：www.iscsemi.cn
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