INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUF410A
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·Designed
for use in high-frequency power supplies and
motor control applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
15
30
3
4.5
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)-1
V
BE(
sat
)-2
I
CER
I
CEV
I
EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
I
C
= 0.2A; I
B
= 0; L= 25mH
I
E
= 50mA; I
C
= 0
I
C
= 5A; I
B
= 0.5A
B
BUF410A
MIN
450
7
TYP.
MAX
UNIT
V
V
0.8
0.5
0.9
1.1
0.2
1.0
0.2
1.0
1.0
V
V
V
V
mA
mA
mA
I
C
= 10A; I
B
= 2A
I
C
= 5A; I
B
= 0.5A
B
I
C
= 10A; I
B
= 2A
V
CE
=V
CEV
; R
BE
= 100Ω
V
CE
=V
CEV
; R
BE
= 100Ω;T
C
=100℃
V
CE
= V
CEV
; V
BE
= -1.5V
V
CE
= V
CEV
; V
BE
= -1.5V;T
C
=100℃
V
EB
= 5V; I
C
= 0
Switching Times; Resistive Load
t
s
t
f
Storage Time
Fall Time
0.8
0.05
μs
μs
I
C
= 5A;I
B1
= 0.5A;V
CC
= 50V;
V
BB
= -5V, R
BB
= 1.2Ω;L= 0.5mH
V
clamp
= 400V
isc Website：www.iscsemi.cn
Analogue and Mixed Signal
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