INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT76AF
DESCRIPTION
·High
Voltage
·High
Speed Switching
·High
Power Dissipation
APPLICATIONS
·Designed
for switching mode power supply, inverters,
motor control and relay driver applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
12
20
3
6
40
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.13
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CES
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= 0.5A; I
B
= 0; L= 125mH
I
C
= 1mA; V
BE
= -1.5V
I
E
= 1mA; I
C
= 0
I
C
= 5A; I
B
= 1A
B
BUT76AF
MIN
450
1000
7
TYP.
MAX
UNIT
V
V
V
1.5
1.6
0.5
2.0
0.5
3.2
7
150
V
V
mA
mA
I
C
= 5A; I
B
= 1A
B
V
CE
=1000V;V
BE
= -1.5V
V
CE
=1000V;V
BE
=-1.5V;T
C
=100℃
V
EB
= 7V; I
C
= 0
I
C
= 8A ; V
CE
= 3V
I
C
= 1A ; V
CE
= 10V
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
MHz
pF
Switching Times;Resistive Load
t
on
t
s
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 5A;I
B1
= -I
B
= 1A; V
CE
= 150V
1.0
3.0
0.8
μs
μs
μs
isc Website：www.iscsemi.cn
Analogue and Mixed Signal
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