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BUV22

Description
isc Silicon NPN Power Transistor
File Size51KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUV22 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV22
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 1.0V (Max.) @I
C
= 10A
·High
Switching Speed
·High
DC Current Gain-
: h
FE
= 20(Min.) @I
C
= 10A
APPLICATIONS
·Designed
for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CER
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
R
BE
= 100Ω
Collector-Emitter Voltage
V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
300
290
300
250
7
40
50
8
250
200
-65~200
UNIT
V
V
V
V
V
A
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.7
UNIT
℃/W
isc Website:www.iscsemi.cn

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