Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6465 2N6466
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Complement
to type 2N6467 2N6468
APPLICATIONS
・For
use in audio amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
IN
导½
半
PARAMETER
CONDITIONS
2N6465
2N6466
Collector-base voltage
Open emitter
V
CEO
Collector-emitter voltage
HA
C
ES
NG
2N6465
2N6466
MIC
E
OR
UCT
ND
O
VALUE
110
130
100
120
5
4
UNIT
V
Open base
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Open collector
V
A
W
℃
℃
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6465 2N6466
MIN
TYP.
MAX
UNIT
2N6465
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6466
I
C
=50mA ;I
B
=0
100
V
120
V
CEsat
Collector-emitter saturation voltage
I
C
=1.5A; I
B
=0.15A
1.2
V
V
BE
Base-emitter on voltage
I
C
=1.5A ; V
CE
=4V
1.5
V
2N6465
I
CBO
Collector cut-off current
2N6466
V
CB
=110V; I
E
=0
10
V
CB
=130V; I
E
=0
μA
I
CEO
电半
固
Collector cut-off current
导½
2N6465
V
CE
= 100V,I
B
=0
2N6466
V
CE
= 120V,I
B
=0
I
EBO
Emitter cut-off current
h
FE
DC current gain
f
T
Transition frequency
CH
IN
ANG
MIC
E SE
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
OR
UCT
ND
O
100
10
15
150
5
μA
μA
MHz
2
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