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2SB919

Description
Silicon PNP Power Transistors
File Size175KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SB919 Overview

Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB919
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1235
・Low
collector saturation voltage
・Large
current capacity
APPLICATIONS
・Large
current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
IN
导½
Fig.1 simplified outline (TO-220) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-30
-6
-8
-15
UNIT
V
V
V
A
A
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.75
W
30
150
-50~150
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
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