Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2344
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SA1011
APPLICATIONS
・High
voltage switching
・Audio
frequency power amplifier;
・100W
output predriver applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
180
160
6
1.5
3.0
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
25
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Base-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA ,R
BE
=∞
I
C
=1mA; I
E
=0
I
E
=1mA; I
C
=0
I
C
=0.5A; I
B
=50mA
I
C
=10mA ; V
CE
=5V
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.3A ; V
CE
=5V
I
C
=50mA ; V
CE
=10V
60
MIN
160
180
6
0.3
1.5
TYP.
2SC2344
MAX
UNIT
V
V
V
V
V
10
10
200
μA
μA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
固电
Output capacitance
导½
半
ANG
CH
IN
Fall time
MIC
E SE
f=1MHz ; V
CB
=10V
DUC
ON
100
23
OR
T
MHz
pF
0.15
0.81
0.48
μs
μs
μs
I
C
=0.5A I
B1
=- I
B2
=50mA
h
FE
Classifications
D
60-120
E
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2344
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2344
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2344
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
5
京公网安备 11010802033920号
EEWORLD
