Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3795B
DESCRIPTION
・With
TO-220F package
・High
breakdown voltage
・Fast
switching speed
・Low
collector saturation voltage
APPLICATIONS
・For
high voltalge ,high-speed
switching applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220F) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
1300
600
8
6
3
UNIT
V
V
V
A
A
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
W
50
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A , L=25mH
I
C
=3A; I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
15
8
MIN
600
2SC3795B
TYP.
MAX
UNIT
V
1.0
1.5
100
100
V
V
μA
μA
固电
导½
半
ANG
CH
IN
MIC
E SE
DUC
ON
OR
T
8
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3795B
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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