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2SC3856

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size142KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric View All

2SC3856 Overview

POWER TRANSISTOR

2SC3856 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SA1492
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
Collector-base voltage
导½
PARAMETER
CONDITIONS
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
200
180
6
15
4
UNIT
V
V
V
A
A
W
T
C
=25℃
130
150
-55~150
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