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SS6108AUS

Description
Trans Voltage Suppressor Diode, 9.1V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2
CategoryDiscrete semiconductor    diode   
File Size200KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SS6108AUS Overview

Trans Voltage Suppressor Diode, 9.1V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2

SS6108AUS Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Breakdown voltage nominal value11.4 V
Maximum clamping voltage16.9 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage9.1 V
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5074, REV. C
1N6108A thru 1N6136A
Standard
Bi-directional TVS
500W
A
V AI L AB L E AS
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*, SS*
Bi-directional Transient Voltage Suppressor Diode, 500W
Qualified per MIL-PRF-19500/516
FEATURES / BENEFITS
Hermetic, non-cavity glass package
Category I Metallurgically bonded
All devices are 100% hot solder dipped
JAN/ JANTX/JANTXV available per MIL-PRF-19500/516
“JANS Plus” removes atypical/out of family V
F
Operating and Storage Temperature: -55 C to +175 C
o
o
ELECTRICAL CHARACTERISTICS
SERIES
TYPE
500W
1N6108A/US
1N6109A/US
1N6110A/US
1N6111A/US
1N6112A/US
1N6113A/US
1N6114A/US
1N6115A/US
1N6116A/US
1N6117A/US
1N6118A/US
1N6119A/US
1N6120A/US
1N6121A/US
1N6122A/US
1N6123A/US
1N6124A/US
1N6125A/US
1N6126A/US
1N6127A/US
1N6128A/US
1N6129A/US
1N6130A/US
1N6131A/US
1N6132A/US
1N6133A/US
1N6134A/US
1N6135A/US
1N6136A/US
MIN
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Vdc
11.40
12.35
14.25
15.20
17.10
19.00
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152
171
mA dc
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8.0
8.0
5.0
WORKING
PEAK REVERSE
VOLTAGE
VRWM
Vdc
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
MAXIMUM
REVERSE
CURRENT
IR1
Adc
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX. CLAMP.
VOLTAGE
VC @ IP
tp = 1ms
V(pk)
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
MAX. PEAK
PULSE
CURRENT
IP
A(pk)
29.6
27.5
23.8
22.4
19.0
18.0
16.4
15.0
13.4
12.0
10.9
10.0
9.3
8.5
7.7
7.1
6.5
5.9
5.1
4.8
4.4
4.0
3.6
3.3
3.0
2.8
2.4
2.3
2.0
MAX. TEMP.
COEFFICIENT
V(BR)
% /
C
.07
.08
.08
.08
.085
.085
.085
.09
.09
.09
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.110
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer
fabrication through assembly and testing using our specification 7700-4093 specification 7700-4091 (for SJ/SX/SV)
and 7700-4093 (for SS).
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
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