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3DD201

Description
Silicon NPN Power Transistors
File Size112KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD201 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD201
DESCRIPTION
・With
TO-3 package
・High
collector-base breakdown voltage
:
V
CBO
=350V
APPLICATIONS
・For
TV horizontal output applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
固电
导½
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
350
150
6
8
UNIT
V
V
V
A
W
T
C
=25℃
50
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
1.5
UNIT
℃/W

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