Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
current
・Complement
to type BD136/138/140
APPLICATIONS
・Driver
stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD135 BD137 BD139
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
电半
固
PARAMETER
导½
CONDITIONS
BD135
BD137
Collector-base voltage
BD139
V
CEO
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
CH
IN
Collector-emitter voltage
ANG
BD135
BD137
MIC
E SE
Open base
Open collector
Open emitter
OR
UCT
ND
O
VALUE
45
60
100
45
60
100
5
1.5
2
1
UNIT
V
V
BD139
Emitter -base voltage
V
A
A
A
W
℃
℃
℃
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
≤70℃
8
150
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD135 BD137 BD139
MIN
TYP.
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=0.5A; I
B
=50mA
0.5
V
V
BE
Base-emitter voltage
I
C
=500mA ; V
CE
=2V
V
CB
=30V; I
E
=0
1.0
V
100
nA
μA
I
CBO
Collector cut-off current
V
CB
=30V; I
E
=0 T
j
=125℃
10
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
100
nA
h
FE-1
DC current gain
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
I
C
=5mA ; V
CE
=2V
40
63
63
100
25
250
160
250
h
FE-2
h
FE-3
f
T
固电
IN
DC current gain
导½
半
I
C
=150mA ; V
CE
=2V
I
C
=500mA ; V
CE
=2V
Transition frequency
ANG
CH
MIC
E SE
I
C
=50mA; V
CE
=5V ;f=100MHz
OR
UCT
ND
O
190
MHz
2
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