Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
D44H10
DESCRIPTION
・With
TO-220C package
・Fast
switching speeds
・Low
collector saturation voltage
APPLICATIONS
・For
general purpose power amplification
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
固电
导½
半
PARAMETER
Collector-base voltage
CH
IN
Collector-emitter voltage
Emitter-base voltage
ANG
MIC
E SE
Open emitter
Open base
Open collector
T
C
=25℃
CONDITIONS
OR
CT
NDU
O
VALUE
80
80
5
10
20
50
UNIT
V
V
V
A
A
W
Collector current (DC)
Collector current-Peak
Total power dissipation
T
a
=25℃
1.67
150
-55~150
℃
℃
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
f
T
C
cb
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector capacitance
CONDITIONS
I
C
=10mA I
B
=0,
I
C
=8A ;I
B
=0.8A
I
C
=8A ;I
B
=0.8A
V
CE
=80V; V
BE
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=1V
I
C
=4A ; V
CE
=1V
I
C
=0.5A ; V
CE
=10V
f=1MHz ; V
CB
=10V
35
20
50
MIN
80
TYP.
D44H10
MAX
UNIT
V
1.0
1.5
10
0.1
V
V
μA
mA
MHz
pF
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
ANG
CH
IN
MIC
E SE
I
C
=5A I
B1
=- I
B2
=0.5A
OR
CT
NDU
O
130
0.3
0.5
0.14
μs
μs
μs
2
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