INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BDW52/A/B/C
DESCRIPTION
·Collector
Current -I
C
= -
15A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -45V(Min)- BDW52; -60V(Min)- BDW52A
-80V(Min)- BDW52B; -100V(Min)- BDW52C
·Complement
to Type BDW51/A/B/C
APPLICATIONS
·Designed
for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW52
VALUE
-45
UNIT
V
CBO
Collector-Base
Voltage
V
CEO
Collector-Emitter
Voltage
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BDW52A
BDW52B
-60
-80
V
BDW52C
-100
-45
BDW52
BDW52A
BDW52B
-60
-80
V
BDW52C
-100
-5
-15
-20
-7
125
200
-65~200
V
A
A
A
W
℃
℃
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.4
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW52
BDW52A
I
C
= -100mA; I
B
= 0
BDW52B
BDW52C
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= -5A; I
B
= -0.5A
B
BDW52/A/B/C
CONDITIONS
MIN
-45
-60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
-80
-100
-1.0
-3.0
-2.5
-1.5
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
V
V
V
V
I
C
= -10A; I
B
= -2.5A
I
C
= -10A; I
B
=- 2.5A
I
C
= -5A; V
CE
= -4V
I
CBO
Collector
Cutoff Current
I
CEO
Collector
Cutoff Current
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BDW52
V
CB
= -45V; I
E
= 0
V
CB
= -45V; I
E
= 0; T
C
= 150℃
V
CB
= -60V; I
E
= 0
V
CB
= -60V; I
E
= 0; T
C
= 150℃
V
CB
= -80V; I
E
= 0
V
CB
= -80V; I
E
= 0; T
C
= 150℃
BDW52A
BDW52B
BDW52C
V
CB
= -100V; I
E
= 0
V
CB
= -100V; I
E
= 0; T
C
= 150℃
B
mA
BDW52
V
CE
= -22V; I
B
= 0
V
CE
= -30V; I
B
= 0
B
BDW52A
BDW52B
-1.0
V
CE
= -40V; I
B
= 0
B
mA
BDW52C
I
EBO
h
FE-1
h
FE-2
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
V
CE
= -50V; I
B
= 0
B
V
EB
= -5V; I
C
=0
I
C
= -5A; V
CE
= -4V
I
C
= -10A; V
CE
= -4V
I
C
= -0.5A; V
CE
= -4V
20
5
3
-2.0
150
mA
MHz
isc Website：www.iscsemi.cn
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