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BAT42WS

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size30KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAT42WS Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

SMD Type
Diodes
SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT42WS / BAT43WS
SOD-323
+0.1
1.7
-0.1
Unit: mm
Low Switching
+0.1
2.6
-0.1
1.0max
Fast Switching
PN Junction Gurad Ring for Transient and ESD Protection
Designed for Surface Mount Application
0.1
0.475
0.375
Plastic Material - UL Recognition Flammability
Clsaaification 94V-O
Absolute Maximum Ratings Ta = 25
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Volatge
Forward Continuous Current (Note 1)
Rectified Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note:
1. Valid provided that terminals are kept at ambient temperature.
@ T < 1.0s
@ t < 10ms
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
I
FSM
P
d
R
èJA
T
j
,T
STG
200
500
4.0
200
625
-55 to+125
mA
mA
A
mW
K/W
30
V
Value
Unit
Electrical Characteristics Ta = 25
Characteristic
Reverse Breakdown Voltage
BAT42WS
Forward Voltage
BAT42WS
BAT43WS
BAT43WS
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
j
t
rr
V
F
Symbol
V
(BR)R
Test Condition
@ I
RS
= 100
A
Min
30
0.4
1.0
0.33
1.0
0.5
10
5.0
A
pF
nS
V
Typ
Max
Unit
V
@ I
F
= 1.0 mA
@ I
F
= 200 mA
@ I
F
= 2.0 mA
@ I
F
= 200 mA
@ V
R
=25 V
V
R
= 1.0 V, f = 1.0 MHz
I
F
= I
R
= 10 mA
I
RR
= 0.1 x I
R,
R
L
= 100
Marking
Type
Marking
BAT42WS
L2
BAT43WS
L3
+0.05
-0.02
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
www.kexin.com.cn
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