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BAT62-03W

Description
SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAT62-03W Overview

SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE

SMD Type
Silicon Schottky Doide
BAT62-03W
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
Low Barrier diode for detectors up to GHz frequencies
+0.1
2.6
-0.1
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Diode reverse voltage
Forward current
Junction current
Storage temperature
Total power dissipation
Junction ambient
(1)
Junction-soldering point
Note:
1.Package mounted on an epoxy pcb 15 mm
16.7mmm
0.7 mm
Ts
85
Symbol
V
R
I
F
T
j
T
stg
P
tot
R
thJA
R
thJS
Value
40
40
150
-55 to+150
100
650
810
mW
K/W
K/W
Unit
V
mA
Electrical Characteristics Ta = 25
Parameter
Breakdown current
Forward voltage
Diode capacitance
Case capacitance
Differential forward resistance
Series inductance chip to ground
Symbol
I
R
V
F
C
T
C
C
R
O
Ls
Test Condition
V
R
= 40 V, T
A
= 25
I
F
= 2 mA
V
R
= 0; f = 1 MHz
f = 1 MHz
V
R
= , f = 10 kHz
0.58
0.35
0.1
225
2
Min
Typ
Max
10
1
0.6
Unit
A
V
pF
pF
k
nH
Marking
Marking
L
0.1
+0.05
-0.02
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
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