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BD176

Description
Silicon PNP Power Transistors
File Size121KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD176 Overview

Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD176 BD178 BD180
DESCRIPTION
With TO-126 package
・Complement
to type BD175 /177 /179
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
BD176
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter -base voltage
Collector current (DC)
ES
NG
BD178
BD180
BD176
BD178
BD180
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
-45
-60
-80
-45
-60
-80
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Open collector
-5
-3
-7
V
A
A
W
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-65~150

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BD176 BD178 BD180
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