Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD234 /236 /238
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD233 BD235 BD237
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
固电
IN
导½
半
PARAMETER
CONDITIONS
BD233
BD235
Collector-base voltage
V
CEO
Collector-emitter voltage
ANG
CH
BD237
BD233
BD235
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
45
60
100
45
60
80
5
2
6
UNIT
V
V
BD237
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
V
A
A
W
℃
℃
25
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
BD233
V
CEO(SUS)
Collector-emitter
sustaining voltage
BD235
BD237
BD233
I
CBO
Collector cut-off current
BD235
BD237
V
CB
=45V; I
E
=0
V
CB
=60V; I
E
=0
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A; I
B
=0
CONDITIONS
I
C
=1A; I
B
=0.1A
I
C
=1A ; V
CE
=2V
BD233 BD235 BD237
MIN
TYP.
MAX
0.6
1.3
UNIT
V
V
45
60
80
V
100
μA
I
EBO
h
FE-1
h
FE-2
f
T
固电
IN
Emitter cut-off current
DC current gain
DC current gain
导½
半
Transition frequency
ANG
CH
MIC
E SE
I
C
=150mA ; V
CE
=2V
I
C
=1A ; V
CE
=2V
I
C
=250mA; V
CE
=10V
OR
UCT
ND
O
1
40
25
3
mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD233 BD235 BD237
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
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