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BD711

Description
Silicon NPN Power Transistors
File Size116KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD711 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・The
BD707 and BD711are respectively
complement to type BD708 and BD712
APPLICATIONS
・Intented
for use in power linear
and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD707 BD709 BD711
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
电半
IN
PARAMETER
导½
CONDITIONS
BD707
BD709
BD711
Open emitter
Collector-base voltage
V
CEO
Collector-emitter voltage
HA
C
ES
NG
BD707
BD709
BD711
MIC
E
OR
UCT
ND
O
VALUE
60
80
100
60
80
100
5
12
18
5
UNIT
V
Open base
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Open collector
V
A
A
A
W
Base current
Total dissipation
Junction temperature
Storage temperature
T
C
=25℃
75
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.67
UNIT
℃/W

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BD711 BD707 BD709
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